MT53E256M32D2DS-046 vs MT53E256M32D2DS-053 WT:B Comparación
Comparación detallada lado a lado de MT53E256M32D2DS-046 por Micron Technology y MT53E256M32D2DS-053 WT:B por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
MT53E256M32D2DS-046 ✓ ActivoMicron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ ActivoComparación de especificaciones
| Parámetro | MT53E256M32D2DS-046 | MT53E256M32D2DS-053 WT:B |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,10 | $21,90 |
| Tipo de memoria | LPDDR4 SDRAM (Mobile DRAM) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8 Gbit | 8 Gbit (256M x 32) |
| Organización de memoria | 256M x 32 | 256M x 32 |
| Clock Frequency | 2133 MHz | — |
| Velocidad de datos | [DATA_NEEDED: data rate] | 1866 Mbps/pin (1.866 GHz) |
| Core Supply Voltage (VDD) | 1.1 V | — |
| Interface Supply Voltage (VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| Encapsulado | 200-WFBGA (10 x 14.5 mm) | 200-ball WFBGA, 10 x 14.5 mm |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Operating Temperature (IT grade) | [DATA_NEEDED: IT temperature range] | — |
| Speed Grade | -046 | — |
| Product Generation | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB/LCSC listing) |
| Automotive Qualification (AUT grade variant) | AEC-Q100 qualified (AUT:B variant) | — |
| Packaging (TR suffix) | Tape & Reel (TR) or Tray | — |
| Supply Voltage (VDD2/VDDQ) | — | 1.1 V |
| Operating Temperature (WT grade) | — | -30C to +85C |
| Self-Refresh | — | Auto self-refresh with built-in temperature sensor |
| Características | — | Auto precharge, write leveling, ZQ calibration |
| Bus Width | — | 32-bit |
| Peak Bandwidth (per device) | — | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Access Time / CAS Latency | — | [DATA_NEEDED: CL at 1866 Mbps] |
| Refresh Interval | — | [DATA_NEEDED: tREFI specification] |
| Package Height | — | [DATA_NEEDED: max package height] |